By W.G. Frankenburg, V.I. Komarewsky, E.K. Rideal (Eds.)
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Extra resources for Advances in Catalysis, Vol. 7
Where the rate is controlled by covalent bond formation, singly occupied atomic orbitals are deemed necessary a t the surface to form strong bonds. In the transition metals where atomic orbitals are available, the activity dependence will be similar to that given for positive ion formation. In copper-rich alloys of the transition elements the activity will be greatly reduced, since there are no unpaired atomic d-orbitals, and for covalent bond formation only a fraction of the metallic bonding orbitals are available.
Chem. 39, 849 (1947). 83. ” Cornell, Ithaca, N. , 1940. 84. May, D. , Saunders, K. , Kropa, E. , and Dixon, J. 8, 290 (1950). 85. Rideal, E. , and Trapnell, B. M. 8,114 (1950). 86. Dowden, D. No. 8, 296 (1950). 87. , Rept. Acad. Sci. R. 47, 439 (1945). This Page Intentionally Left Blank Chemisorption and Catalysis on Oxide Semiconductors G. PARRAVANO AND M. BOUDART Forrestal &Search Center, PTinceton University, Princeton, New Jersey Page I. Chemisorption of Hydrogen on Zinc Oxide.. . . . .
Both methods [( 1) and ( 2 ) ]are theoretically possible in n- and p-type semiconductors. I n n-type semiconductors, method 1 is characterized by a n electropositive interstitial atom, for example Zn in ZnO. This can be considered as an interstitial ion and its trapped electron, whose orbit may well extend over many atomic diameters; a t higher temperatures the electron will be free t o move throughout the lattice, giving rise t o electronic conductivity. 17. Diagrammatic illustrations of intrinsic ( a ) and extrinsic (b,c) semiconductors.
Advances in Catalysis, Vol. 7 by W.G. Frankenburg, V.I. Komarewsky, E.K. Rideal (Eds.)